III-V Epi and Surrey Researchers Co-Develop InP-Based Epitaxial Wafers for Telecoms Lasers

Posted  by GoPhotonics

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III-V Epi, the fast turnaround manufacturer of MBE and MOCVD, III-V epitaxial structures, has successfully produced experimental, Telecoms laser structures targeting temperature insensitive operation. The epitaxy development was for the University of Surrey, funded by the UK, EPSRC Impact Acceleration Account.

Professor Stephen Sweeney, The University of Surrey lead researcher, managing the project, said, “The team at III-V Epi is helping us to develop robust and practical, indium phosphide (InP) based, epitaxial wafers for telecoms lasers that eliminate the need for expensive, energy-hungry, cooling systems. III-V Epi provided design and engineering expertise in the choice of material systems and manufacturability, which informed our design simulations.

“III-V Epi went on to produce wafers by MOCVD (metal organic chemical vapor deposition) for the university to process, test, and further optimize. The resulting lasers will be a breakthrough in the industry, with this development enabled by III-V Epi’s world-class service and expertise.”

The University of Surrey is one of 36 institutions with an EPSRC Impact Acceleration Account. This provides rapid access to funds from UK Research and Innovation (UKRI) for knowledge exchange, innovation, and impacts – such as proof of concept, commercialization, and market validation projects of this type.

Click here to know more about SHARK-VECSELs Project.