ElectroPhotonic-IC (ELPHiC), an emerging technology innovator of new generation IndiumPhosphide chips, announced the samples availability of their integrated Optics/Electronics receiver. This follows the sampling of its 10G 1271 laser for ONU application which has shown very high reliability.
ELPHiC has developed a ground-breaking optoelectronic integration technology, leading to a new generation of Indium Phosphide chips enabling higher performance, lower power consumption, and increased reliability for lasers and PIN receivers. This integration eliminates the need for APDs, thus reducing the cost of the receiver. ELPHiC will soon announce sampling dates for its breakthrough EML for 224Gb/s applications.
According to Jim Hjartarson, CEO of ELPHiC, and a seasoned telecommunications industry veteran, “By integrating key optical and electronic elements on the same InP semiconductor substrate with the analog amplification circuitry, we create an architectural shift in building optics chipsets that significantly improve performance and power, lower cost, and reduce module form factor. Our patented PIN architecture also allows for sensitivity levels comparable to those of APDs.”
Christian Ilmi, VP of Worldwide Sales, who recently joined ELPHiC from the optical module manufacturing industry, added: “The demand for lasers and receivers from module manufacturers of PON and Datacom markets has seen an unprecedented increase over the past 3 years. The recently announced government funding for PON deployments will add even more pressure to this demand. ELPHiC’s timing for cheaper and more effective optics could not be better.”
Joe Costello, Chairman of the board of ELPHiC and Silicon Valley veteran said, “Finally the promise of monolithic integration of optical devices and electronics is coming to market. With the benefits of ELPHiC’s technology, the performance of optical links in PON, datacenters and other emerging innovative markets will take a giant leap forward”.
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