D9-4-808-1000

Note: Your Quotation Request will be directed to Egismos Technology Corporation.

The D9-4-808-1000 from Egismos Technology Corporation is a Laser Diode with Wavelength 803 nm, 808 nm, 813 nm (Peak), Output Power 1000 mW, Output Power 1000 mW, Operating Voltage 2 to 2.6 V, Operating Current 1200 to 1500 mA. More details for D9-4-808-1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    D9-4-808-1000
  • Manufacturer
    Egismos Technology Corporation
  • Description
    808 nm Infrared Laser Diode with TO-Can Package

Applications

  • Application
    Laser Projector, Measuring equipment, laser pointers, laser barcode scanners, diode laser equipments, medical instruments and aerospace applications
  • Application Industry
    Aerospace, Medical, Industrial, Test & Measurement

General Parameters

  • Technology
    Multi-Quantum Well (MQW)
  • Operation Mode
    CW Laser
  • Wavelength
    803 nm, 808 nm, 813 nm (Peak)
  • Output Power
    1000 mW
  • Output Power
    1000 mW
  • Operating Voltage
    2 to 2.6 V
  • Operating Current
    1200 to 1500 mA
  • Operating Current
    1200 to 1500 mA
  • Reverse Voltage
    2 V
  • Threshold Current :
    240 mA
  • Laser Gain Medium
    AlGaAs
  • Beam Divergence
    9 to 12 Degree (Parallel), 30 to 40 Degree (Perpendicular)
  • Beam Divergence Parallel
    9 to 12 Degree
  • Beam Divergence Perpendicular
    30 to 40 Degree
  • Laser Color
    Infrared
  • Slope Efficiency
    1 W/A
  • Package Type
    TO-Can
  • Package
    5.6mm TO-Can Package
  • Type
    Free Space Laser Diode

Physical Properties

  • RoHS
    Yes

Temperature

  • Operating Temperature
    -10 to 40 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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