The TPG2EW1S09 from Excelitas Technologies is a GaAs Pulsed Semiconductor Laser Diode that operates at a wavelength from 895 to 925 nm. It provides an optical peak power of 85 W and has a power slope of 3 W/A. The laser diode has a spectral width (FWHM) of 10 nm and a pulse duration of 100 ns. It has a forward voltage of 13.5 V and a threshold current of up to 1.5 A. The laser diode is built on a multi-layer monolithic chip design and is fabricated on a GaAs structure. It is available in a TO-like T1¾ through-hole plastic package and is ideal for LiDAR / ToF measurements, laser range finding, laser scanning / UGV, infrared night illumination, laser therapy, material excitation in medical, and analytical applications.