TPG2EW1S09

Laser Diode by Excelitas Technologies

Note: Your Quotation Request will be directed to Excelitas Technologies.

The TPG2EW1S09 from Excelitas Technologies is a GaAs Pulsed Semiconductor Laser Diode that operates at a wavelength from 895 to 925 nm. It provides an optical peak power of 85 W and has a power slope of 3 W/A. The laser diode has a spectral width (FWHM) of 10 nm and a pulse duration of 100 ns. It has a forward voltage of 13.5 V and a threshold current of up to 1.5 A. The laser diode is built on a multi-layer monolithic chip design and is fabricated on a GaAs structure. It is available in a TO-like T1¾ through-hole plastic package and is ideal for LiDAR / ToF measurements, laser range finding, laser scanning / UGV, infrared night illumination, laser therapy, material excitation in medical, and analytical applications.

Product Specifications View similar products

Product Details

  • Part Number
    TPG2EW1S09
  • Manufacturer
    Excelitas Technologies
  • Description
    Pulsed Semiconductor Laser Diode from 895 to 925 nm

Applications

  • Application
    LIDAR (Laser Imaging Detection and Ranging), Measurement and instrumentation, IR illumination, Laser Therapy, Material excitation in medical and other analytical applications, Laser Scanning
  • Application Industry
    Test & Measurements, Security, Medical, Bio Medical, Aerospace / Military, Commercial

General Parameters

  • Configuration
    Single Emitter
  • Operation Mode
    Pulsed Laser
  • Wavelength
    895 to 925 nm
  • Output Power
    75 to 85 W
  • Pulse Duration
    100 ns
  • Spectral Width (FWHM)
    10 nm
  • Operating Voltage
    13.5 V
  • Reverse Voltage
    40 V
  • Threshold Current
    1.5 A
  • Beam Divergence Parallel
    10 Degree
  • Beam Divergence Perpendicular
    25 Degree
  • Duty Factor
    0.1 %
  • Slope Efficiency
    3 W/A
  • Package Type
    Through-Hole
  • Package
    2-Pin TO Package
  • Lead Soldering Temperature
    260 Degree C
  • Type
    Free Space Laser Diode
  • Wavelength Temp. Coefficient
    0.25 nm/Degree C

Physical Properties

  • RoHS
    Yes

Temperature

  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 105 Degree C

Technical Documents

Click to view more product details on manufacturer's website