850D1S09X

Laser Diode by Laser Components

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The 850D1S09X from Laser Components is a Laser Diode with Wavelength 850 nm, Output Power 13 W, Operating Voltage 3 V, Threshold Current 900 mA, Output Power (Pulsed) 13 W. More details for 850D1S09X can be seen below.

 Product Specifications

    Product Details

    • Part Number :
      850D1S09X
    • Manufacturer :
      Laser Components
    • Description :
      13 W, 850 nm, High Power AlGaAs Pulse Laser Diodes

    Applications

    • Application :
      Range Finding, Surveying Equipment, Weapons Simulations, Laser Radar, Security Barrier, Optical Trigger
    • Application Industry :
      Commercial, Military

    General Parameters

    • Configuration :
      Single Emitter
    • Chip Technology :
      AlGaAs
    • Operation Mode :
      Pulsed Laser
    • Wavelength :
      850 nm
    • Output Power :
      13 W
    • Pulse Duration :
      150 ns
    • Spectral Width (FWHM) :
      5.5 nm
    • Operating Voltage :
      3 V
    • Forward Voltage :
      3 V
    • Peak Forward Current :
      18 A
    • Threshold Current :
      900 mA
    • Beam Divergence Parallel :
      10.5 Degree
    • Beam Divergence Perpendicular :
      20 Degree
    • Duty Factor :
      0.1%
    • Laser Color :
      Infrared
    • Emitting Area :
      255 x 1 um
    • Slope Efficiency :
      0.9 W/A
    • Package Type :
      TO-Can, Sub-Mount
    • Package :
      8 - 32 Coax, 9 mm CD, 5.6 mm, TO-18, Ceramic Carrier
    • Stack/Array :
      Single Stack
    • Type :
      Free Space Laser Diode
    • Wavelength Temp. Coefficient :
      0.21 nm/Degree C
    • Output Power (Pulsed) :
      13 W
    • Note :
      Contact Stripe Width: 9 mil, Diode Configuration: Single/Double/Triple/Quad Stack

    Temperature

    • Operating Temperature :
      -45 to 85 Degree C
    • Storage Temperature :
      -55 to 100 Degree C

    Technical Documents

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