Laser Diode by II-VI Laser Enterprise

Note: Your Quotation Request will be directed to II-VI Laser Enterprise.

The SES4-808A/B/C-01 from II-Vi Laser Enterprise is a Single Emitter Laser Diode that operates at a wavelength from 806 to 808 nm. It provides a CW output power of 4 W with a conversion efficiency of 50 % and has a slope efficiency of 1.1 W/A. This TE polarized laser diode has a spectral width of 2 nm (FWHM) and a threshold current of up to 600 mA. It requires a DC supply of 1.9 V and consumes 4 A of current. 

The SES4-808A/B/C-01 is based on a proprietary E2 front mirror passivation process that prevents Catastrophic Optical Damage (COD) to the laser diode facet even at extremely high output powers. This RoHS-compliant laser diode is available in a highly reliable single quantum well MBE structure that measures 3.6 x 0.4 mm and is ideal for solid-state laser pumping, medical, analytical, and printing applications. 

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    II-VI Laser Enterprise
  • Description
    Single Emitter Laser Diode from 806 to 808 nm


  • Application
    Solid-state laser pumping, Medical, Analytical, Printing

General Parameters

  • Configuration
    Single Emitter
  • Technology
    Fiber-Bragg-Grating Laser (FBG)
  • Operation Mode
    CW Laser
  • Wavelength
    806 nm
  • Output Power
    4 W
  • Spectral Width (FWHM)
    2 nm
  • Operating Voltage
    1.9 V
  • Operating Current
    4 A
  • Threshold Current
    600 mA
  • Beam Divergence Parallel
    6 Degree
  • Beam Divergence Perpendicular
    27 Degree
  • Series Resistance
    0.03 Ohms
  • Slope Efficiency
    1.1 W/A
  • Package Type
    Chip on sub-mount
  • Package
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    4 W

Physical Properties

  • RoHS

Technical Documents

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