L85H6S-A/B/C

Laser Diode by LECC Technology

Note: Your Quotation Request will be directed to LECC Technology.

The L85H6S-A/B/C from LECC Technology is a Laser Diode with Wavelength 845 to 865 nm, Output Power 20 mW, Output Power 20 mW, Operating Voltage 2 to 2.5 V, Operating Current 15 to 70 mA. More details for L85H6S-A/B/C can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    L85H6S-A/B/C
  • Manufacturer
    LECC Technology
  • Description
    MOCVD grown 850 nm band AlGaAs laser diode with quantum well structure

Applications

  • Application
    Night Vision, Sensor, Induatrial Optical Module

General Parameters

  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    845 to 865 nm
  • Output Power
    20 mW
  • Output Power
    20 mW
  • Operating Voltage
    2 to 2.5 V
  • Operating Current
    15 to 70 mA
  • Operating Current
    15 to 70 mA
  • Reverse Voltage
    2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current
    5 to 30 mA
  • Monitor Current
    0.1 to 0.5 mA
  • Laser Gain Medium
    AIGaAs Laser
  • Beam Divergence Parallel
    10 to 18 Degree
  • Beam Divergence Perpendicular
    25 to 40 Degree
  • Slope Efficiency
    0.4 to 0.9 mW/mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6mmf)
  • Type
    Free Space Laser Diode
  • Note
    Optical Distance: ±60 µm

Temperature

  • Operating Temperature
    -10 to 60 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents

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