ARR115P1000

Laser Diode by Northrop Grumman

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The ARR115P1000 from Northrop Grumman is a Laser Diode with Wavelength 808 nm, Output Power 200 W, Operating Voltage 10 V, Operating Current 175 A, Threshold Current 15000 mA. More details for ARR115P1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ARR115P1000
  • Manufacturer
    Northrop Grumman

Applications

  • Application
    Cutting, Solid State Pumping

General Parameters

  • Configuration
    Array
  • Operation Mode
    CW Laser
  • Wavelength
    808 nm
  • Wavelength Tolerance
    ± 3 nm
  • Output Power
    200 W
  • Cooling Method
    Conduction-Cooled
  • Spectral Width (FWHM)
    3.0 nm
  • Operating Voltage
    10 V
  • Operating Current
    175 A
  • Threshold Current :
    15000 mA
  • Power Conversion Efficiency
    0.57%
  • Beam Divergence
    38 x 7 Degree
  • Slope Efficiency
    6.25 W/A
  • Package Type
    Bar
  • Stack/Array
    Array/Stack
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    200 W
  • Note
    Total Power(No. diodes): 3200 W, No. of Diodes: 16

Temperature

  • Temperature Drift
    0.2.5 nm / Degree C
  • Operating Temperature
    -40 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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