ARR291P1800

Laser Diode by Northrop Grumman

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The ARR291P1800 from Northrop Grumman is a Laser Diode Array of 8/10/12 laser diode bar stacks that operates at a wavelength of 790 to 1550 nm. It delivers a QCW output power of 1800 W (150 W per bar) with a slope efficiency of 15 W/A and electro-optical efficiency of 55%. This laser array has a beam divergence of up to 38x7° and a pulse duration of 0.5-300 ms. It is assembled with hard AuSn solder and expansion matched materials for increased reliability and is cooled by Non-Deionized standard filtered water, making installation and maintenance more cost and time efficient. This laser has fast-axis and slow-axis collimation lensing options available. It requires a DC supply of 24 V and consumes 140 A of current. This laser array is available in an H package and is ideal for material processing, LiDAR, laser peening, Ti:S pumping, laser cutting and direct diode applications like hair removal and plastic welding.

Product Specifications View similar products

Product Details

  • Part Number
    ARR291P1800
  • Manufacturer
    Northrop Grumman
  • Description
    8/10/12 Bar Laser Diode Array from 790 to 1550 nm

Applications

  • Application
    Hair Removal, Plastic Welding
  • Application Industry
    Direct Diode Applications

General Parameters

  • Configuration
    Array
  • Bar Configuration
    Vertical Stack
  • Beam Divergence Half Angle
    38x7 Degrees
  • Operation Mode
    Pulsed Laser
  • Wavelength
    808 nm
  • Wavelength Tolerance
    ±10 nm
  • Output Power
    0 to 1800 W
  • Pulse Duration
    0.5 ms to 300 ms
  • Cooling Method
    Water Cooled
  • Operating Voltage
    24 V
  • Operating Current
    140 A
  • Threshold Current
    2500 mA
  • Power Conversion Efficiency
    55 %
  • No. of Bars
    8-Bar, 10-Bar and 12-Bar
  • Series Resistance
    0.036 Ohms
  • Slope Efficiency
    15 W/A
  • Package Type
    Bar
  • Package
    H Package
  • Stack/Array
    Array/Stack
  • Type
    Free Space Laser Diode
  • Wavelength Temp. Coefficient
    0.25 nm/°C

Temperature

  • Operating Temperature
    -40 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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