SPL LL90_3

Laser Diode by OSRAM

Note: Your Quotation Request will be directed to OSRAM.

The SPL LL90_3 from OSRAM is a Hybrid Pulsed Laser Diode that operates at a wavelength of 905 nm. It delivers a peak output power of 70 W and has a pulse width (FWHM) of 40 ns. This laser diode has a beam divergence of 15° (parallel) & 30° (perpendicular) with a rise time of 10 ns and a fall time of 45 ns. It has an aperture of size 200 x 10 μm² and a reverse current of 10 μA. This laser diode has strained InAIGaAs/GaAs QW structures and uses nanostack laser technology. It has 3 epitaxially stacked emitters and an integrated driver stage, FET, and capacitors for pulse control. It requires a DC supply of 20 V and is available in a small size plastic package that measures 4.9 x 2.4 x 5 mm. This laser diode is ideal for electronic equipment, equipment illumination (e.g. curing, endoscope), high-bay industrial, industrial automation (machine controls, light barriers, vision controls), LIDAR, Pre-Crash, ACC, safety & security, and CCTV applications.

Product Specifications View similar products

Product Details

  • Part Number
    SPL LL90_3
  • Manufacturer
    OSRAM
  • Description
    Hybrid Pulsed Laser Diode from 895 nm to 915 nm

Applications

  • Application
    Electronic Equipment, Equipment Illumination (e.g. Curing, Endoscope), Highbay Industrial, Industrial Automation (Machine Controls, Light Barriers, Vision Controls), LIDAR, Pre-Crash, ACC, Safety and Security, CCTV

General Parameters

  • Configuration
    Multi-Emitter
  • Technology
    Quantum Well
  • Operation Mode
    Pulsed Laser
  • Wavelength
    895 nm, 905 nm, 915 nm
  • Output Power
    60000 to 80000 mW
  • Output Power
    60 to 80 W
  • Pulse Duration
    37 to 43 ns
  • Spectral Width (FWHM)
    7 nm
  • Duty Cycle
    0.001
  • Reverse Voltage
    12 V
  • Reverse Current(LD)
    10 µA
  • Laser Gain Medium
    InAIGaAs/GaAs
  • Beam Divergence
    12 to 18 Degrees (Parallel), 27 to 33 Degrees (Perpendicular)
  • Beam Divergence Parallel
    12 to 18 Degrees
  • Beam Divergence Perpendicular
    27 to 33 Degrees
  • Laser Color
    Infrared
  • Number of Emitters
    3
  • Package Type
    Through-Hole
  • Lead Soldering Temperature
    260 Degree C
  • Rise/Fall Time
    7 to 13 ns (Rise), 40 to 50 ns (Fall)
  • Thermistor Resistance
    200 K / W
  • Type
    Free Space Laser Diode
  • Wavelength Temp. Coefficient
    0.3 to 0.33 nm / K
  • Note
    Aperture Size: 200 x 10 µm2 (W x H)

Physical Properties

  • Weight
    430 mg
  • RoHS
    Yes

Temperature

  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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