QL65D5S-A/B/C

Note: Your Quotation Request will be directed to Quantum Semiconductor International.

The QL65D5S-A/B/C from Quantum Semiconductor International is a Laser Diode with Wavelength 650 to 660 nm, Output Power 5 mW, Output Power 5 mW, Operating Voltage 2.3 to 2.6 V, Operating Current 24 to 25 mA. More details for QL65D5S-A/B/C can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    QL65D5S-A/B/C
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure

Applications

  • Application
    Laser Pointer, Bar Code Reader, Optical Leveler

General Parameters

  • Configuration
    Single Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    650 to 660 nm
  • Output Power
    5 mW
  • Output Power
    5 mW
  • Operating Voltage
    2.3 to 2.6 V
  • Operating Current
    24 to 25 mA
  • Operating Current
    24 to 25 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current
    17 to 30 mA
  • Monitor Current
    0.1 to 0.5 mA
  • Laser Gain Medium
    InGaAlP Lasers
  • Beam Divergence Parallel
    6 to 12 Degree
  • Beam Divergence Perpendicular
    22 to 38 Degree
  • Laser Color
    Red
  • Operating Current (CW)
    24 to 25 mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6 mmf)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    5 mW
  • Note
    Beam Angle Parallel: ±1.5 Degree, Beam Angle Parpendicular: ±2.5 Degree, Optical Distance: ±60 µm

Physical Properties

  • Dimension
    5.6 mm

Temperature

  • Operating Temperature
    -10 to 50 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents

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