QL65F6S-A/B/C

Note: Your Quotation Request will be directed to Quantum Semiconductor International.

The QL65F6S-A/B/C from Quantum Semiconductor International is a Laser Diode with Wavelength 645 to 660 nm, Output Power 10 mW, Output Power 10 mW, Operating Voltage 2.3 to 2.6 V, Operating Current 50 to 70 mA. More details for QL65F6S-A/B/C can be seen below.

Product Specifications View similar products

Product Details

  • Part Number
    QL65F6S-A/B/C
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure

Applications

  • Application
    Laser Module, Bar Code Reader, Optical Pick-up

General Parameters

  • Configuration
    Single Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    645 to 660 nm
  • Output Power
    10 mW
  • Output Power
    10 mW
  • Operating Voltage
    2.3 to 2.6 V
  • Operating Current
    50 to 70 mA
  • Operating Current
    50 to 70 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current
    40 to 50 mA
  • Monitor Current
    0.1 to 0.5 mA
  • Laser Gain Medium
    InGaAlP Lasers
  • Beam Divergence Parallel
    6 to 12 Degree
  • Beam Divergence Perpendicular
    21 to 36 Degree
  • Laser Color
    Red
  • Operating Current (CW)
    50 to 70 mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6 mmf)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    10 mW
  • Note
    Beam Angle Parallel: ±1.5 Degree, Beam Angle Parpendicular: ±2.5 Degree, Optical Distance: ±60 µm

Physical Properties

  • Dimension
    5.6 mm

Temperature

  • Operating Temperature
    -10 to 60 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents

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