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QL78C6S-A/B/C-L

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The QL78C6S-A/B/C-L from Quantum Semiconductor International is a Laser Diode with Wavelength 770 to 795 nm, Output Power 3 mW, Output Power 3 mW, Operating Voltage 1.9 to 2.5 V, Operating Current 20 to 33 mA. More details for QL78C6S-A/B/C-L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL78C6S-A/B/C-L
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 780 nm band AlGaAs laser diode with quantum well structure

Applications

  • Application
    Laser Beam Printer, Sensor, Laser Optical Module

General Parameters

  • Configuration
    Single-Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    770 to 795 nm
  • Output Power
    3 mW
  • Output Power
    3 mW
  • Operating Voltage
    1.9 to 2.5 V
  • Operating Current
    20 to 33 mA
  • Operating Current
    20 to 33 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    25 V
  • Threshold Current :
    8 to 20 mA
  • Monitor Current
    0.15 to 0.45 mA
  • Laser Gain Medium
    AlGaAs Lasers
  • Beam Divergence Parallel
    8 to 12 Degree
  • Beam Divergence Perpendicular
    26 to 30 Degree
  • Laser Color
    Infrared
  • Operating Current (CW)
    20 to 33 mA
  • Slope Efficiency
    0.4 to 0.5 mW/mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6 mmf)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    3 mW
  • Note
    Beam Angle Parallel: ±2 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±80 µm

Physical Properties

  • Dimension
    5.6 mm

Temperature

  • Operating Temperature
    -10 to 60 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents
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