QL80T4HD-Y

Note: Your Quotation Request will be directed to Quantum Semiconductor International.

The QL80T4HD-Y from Quantum Semiconductor International is a Laser Diode with Wavelength 785 to 830 nm, Output Power 1 W, Output Power 1 W, Operating Voltage 2 to 2.5 V, Operating Current 1.1 to 1.5 A. More details for QL80T4HD-Y can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL80T4HD-Y
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 808 nm band AlGaAs laser diode with quantum well structure

Applications

  • Application
    Solid state laser excitation, Medical use, Material processes, Measurement

General Parameters

  • Configuration
    Single-Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    785 to 830 nm
  • Output Power
    1 W
  • Output Power
    1 W
  • Operating Voltage
    2 to 2.5 V
  • Operating Current
    1.1 to 1.5 A
  • Operating Current
    1.1 to 1.5 A
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current :
    0.25 to 0.30 A
  • Beam Divergence Parallel
    7 to 12 Degree
  • Beam Divergence Perpendicular
    30 to 40 Degree
  • Laser Color
    Infrared
  • Operating Current (CW)
    1.1 to 1.5 A
  • Package Type
    TO-Can
  • Package
    TO-5 (f 9mm)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    1 W
  • Note
    Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±80 µm

Physical Properties

  • Dimension
    9.0 mm

Temperature

  • Operating Temperature
    -10 to 40 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents

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