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QL83H6S-A/B/C

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The QL83H6S-A/B/C from Quantum Semiconductor International is a Laser Diode with Wavelength 820 to 840 nm, Output Power 20 mW, Output Power 20 mW, Operating Voltage 1.9 to 2.5 V, Operating Current 45 to 70 mA. More details for QL83H6S-A/B/C can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL83H6S-A/B/C
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 830 nm band GaAs laser diode with quantum well structure

Applications

  • Application
    Medical

General Parameters

  • Configuration
    Single-Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    820 to 840 nm
  • Output Power
    20 mW
  • Output Power
    20 mW
  • Operating Voltage
    1.9 to 2.5 V
  • Operating Current
    45 to 70 mA
  • Operating Current
    45 to 70 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current :
    15 to 30 mA
  • Monitor Current
    0.1 to 1 mA
  • Laser Gain Medium
    GaAs Lasers
  • Beam Divergence Parallel
    7 to 12 Degree
  • Beam Divergence Perpendicular
    25 to 35 Degree
  • Laser Color
    Infrared
  • Operating Current (CW)
    45 to 70 mA
  • Slope Efficiency
    0.3 to 0.9 mW/mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6 mmf)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    20 mW
  • Note
    Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±60 µm

Physical Properties

  • Dimension
    5.6 mm

Temperature

  • Operating Temperature
    -10 to 60 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents
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