QL94J6SA/B/C

Laser Diode by Quantum Semiconductor International

Note: Your Quotation Request will be directed to Quantum Semiconductor International.

The QL94J6SA/B/C from QSI is a MOCVD grown 940 nm band InGaAs laser diode with Quantum well structure. It provides a light output power of 50 mW for Industrial optical module and sensor applications. The laser diode is available in a 5.6 mm TO-18 package and has a built-in photodiode for the monitoring of laser diode.

 Product Specifications

    Product Details

    • Part Number :
      QL94J6SA/B/C
    • Manufacturer :
      Quantum Semiconductor International
    • Description :
      MOCVD grown 940 nm band InGaAs laser diode with quantum well structure

    Applications

    • Application :
      Sensor, Industrial Optical Module
    • Application Industry :
      Industrial

    General Parameters

    • Configuration :
      Single Emitter
    • Technology :
      Quantum Well
    • Chip Technology :
      InGaAs
    • Operation Mode :
      CW Laser
    • Wavelength :
      930 to 950 nm
    • Output Power :
      50 mW
    • Output Power :
      50 mW
    • Operating Voltage :
      1.5 to 2.4 V
    • Operating Current :
      60 to 90 mA
    • Operating Current :
      60 to 90 mA
    • Reverse Voltage :
      LD Reverse Voltage: 2 V
    • Reverse Voltage(PD) :
      30 V
    • Threshold Current :
      10 to 40 mA
    • Monitor Current :
      0.1 to 0.8 mA
    • Laser Gain Medium :
      InGaAs Lasers
    • Beam Divergence Parallel :
      6 to 12 Degree
    • Beam Divergence Perpendicular :
      22 to 28 Degree
    • Laser Color :
      Infrared
    • Operating Current (CW) :
      60 to 90 mA
    • Package Type :
      TO-Can
    • Package :
      TO-18 (5.6 mmf)
    • Type :
      Free Space Laser Diode
    • Output Power (CW) :
      50 mW
    • Note :
      Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±60 µm

    Physical Properties

    • Dimension :
      5.6 mm

    Temperature

    • Operating Temperature :
      -10 to 60 °C
    • Storage Temperature :
      -40 to 85 °C

    Technical Documents

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