QL94R6S-A/B/C

Note: Your Quotation Request will be directed to Quantum Semiconductor International.

The QL94R6S-A/B/C from Quantum Semiconductor International is a Laser Diode with Wavelength 930 to 950 nm, Output Power 200 mW, Output Power 200 mW, Operating Voltage 1.8 to 2.4 V, Operating Current 270 to 320 mA. More details for QL94R6S-A/B/C can be seen below.

Product Specifications

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Product Details

  • Part Number
    QL94R6S-A/B/C
  • Manufacturer
    Quantum Semiconductor International
  • Description
    MOCVD grown 940 nm band InGaAs laser diode with quantum well structure

Applications

  • Application
    Sensor, Industrial Optical Module

General Parameters

  • Configuration
    Single-Emitter
  • Technology
    Quantum Well
  • Operation Mode
    CW Laser
  • Wavelength
    930 to 950 nm
  • Output Power
    200 mW
  • Output Power
    200 mW
  • Operating Voltage
    1.8 to 2.4 V
  • Operating Current
    270 to 320 mA
  • Operating Current
    270 to 320 mA
  • Reverse Voltage
    LD Reverse Voltage: 2 V
  • Reverse Voltage(PD)
    30 V
  • Threshold Current :
    20 to 40 mA
  • Monitor Current
    0.1 to 0.8 mA
  • Laser Gain Medium
    InGaAs Lasers
  • Beam Divergence Parallel
    6 to 12 Degree
  • Beam Divergence Perpendicular
    22 to 30 Degree
  • Laser Color
    Infrared
  • Operating Current (CW)
    270 to 320 mA
  • Package Type
    TO-Can
  • Package
    TO-18 (5.6 mmf)
  • Type
    Free Space Laser Diode
  • Output Power (CW)
    200 mW
  • Note
    Beam Angle Parallel: ±3 Degree, Beam Angle Parpendicular: ±3 Degree, Optical Distance: ±60 µm

Physical Properties

  • Dimension
    5.6 mm

Temperature

  • Operating Temperature
    -10 to 60 °C
  • Storage Temperature
    -40 to 85 °C

Technical Documents

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