TO56m-100-173

Laser Diode by SemiNex Corporation

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The TO56m-100-173 from SemiNex is a Pulsed Laser Diode with an output wavelength of 1250 nm. It produces a pulsed output power of 8 W and has a pulse width of 150 ns (duty cycle of 0.1%). This single/multi-mode laser diode has a slope efficiency of 0.2 W/A, and a cavity length of 1500 μm. It has a fast axis division of 30 degrees (perpendicular) & a slow axis division of 10 degrees (parallel). The laser diode requires a DC supply of 7.3 V and has a threshold current of up to 1 A. It is available in a TO56 package that measures 50 x 1 μm and is ideal for OEM & professional medical, LiDAR, military, aerospace, and illumination applications.

Product Specifications View similar products

Product Details

  • Part Number
    TO56m-100-173
  • Manufacturer
    SemiNex Corporation
  • Description
    1250 nm Pulsed Laser Diode for OEM, Medical and Military Applications

Applications

  • Application
    OEM, LiDAR, Illumination
  • Application Industry
    Medical, Aerospace / Military

General Parameters

  • Chip Technology
    InP
  • Operation Mode
    Pulsed Laser
  • Wavelength
    1250 nm
  • Output Power
    8 W
  • Operating Voltage
    7.3 V
  • Operating Current
    20 A
  • Emitter Width
    50 µm
  • Threshold Current
    1000 mA
  • Power Conversion Efficiency
    0.02
  • Beam Divergence Parallel
    14 Degrees
  • Beam Divergence Perpendicular
    30 Degrees
  • Laser Color
    Infrared
  • Emitting Area
    50 x 1 µm (W x H)
  • Series Resistance
    0.2 Ohms
  • Slope Efficiency
    0.2 W/A
  • Package Type
    TO-Can
  • Type
    Free Space Laser Diode
  • Tags
    TO56 Mini
  • Note
    Cavity Length : 1.5 mm

Physical Properties

  • Dimension
    5.6 x 4.3 mm (D x L)
  • Weight
    0.31 g

Temperature

  • Operating Temperature
    -40 to 60 Degree C
  • Storage Temperature
    -40 to 80 Degree C

Technical Documents

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