TO56m-200-173

Laser Diode by SemiNex Corporation

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The TO56m-200-173 from SemiNex is an Infrared Laser Diode that operates at 1250 nm. It delivers a pulsed output power of 13 W and has a slope efficiency of 0.2 W/A. The laser diode has a fast axis divergence of 30° (FWHM) and a slow axis divergence of 14° (FWHM). It requires a DC supply of 7.9 V and consumes up to 35 A of current. This laser diode is available in a TO56 package and is suitable for military/aerospace, LiDAR, OEM medical, professional medical, and illumination purpose applications.

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Product Details

  • Part Number
    TO56m-200-173
  • Manufacturer
    SemiNex Corporation
  • Description
    1250 nm Infrared Laser Diode for LiDAR, Medical and Defense Applications

Applications

  • Application
    OEM, LiDAR, Illumination
  • Application Industry
    Medical, Aerospace / Military

General Parameters

  • Chip Technology
    InP
  • Operation Mode
    Pulsed Laser
  • Wavelength
    1250 nm
  • Output Power
    13 W
  • Operating Voltage
    7.9 V
  • Operating Current
    35 A
  • Emitter Width
    95 µm
  • Threshold Current
    1000 mA
  • Power Conversion Efficiency
    0.02
  • Beam Divergence Parallel
    14 Degrees
  • Beam Divergence Perpendicular
    30 Degrees
  • Laser Color
    Infrared
  • Emitting Area
    95 x 1 µm (W x H)
  • Series Resistance
    0.2 Ohms
  • Slope Efficiency
    0.2 W/A
  • Package Type
    TO-Can
  • Type
    Free Space Laser Diode
  • Tags
    TO56 Mini
  • Note
    Cavity Length : 1.5 mm

Physical Properties

  • Dimension
    5.6 x 4.3 mm (D x L)
  • Weight
    0.31 g

Temperature

  • Operating Temperature
    -40 to 60 Degree C
  • Storage Temperature
    -40 to 60 Degree C

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