Laser Diode by SemiNex Corporation

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The TO56m-300 from SemiNex Corporation is an InP-based IR Laser Diode that operates at a wavelength of 1550 nm. It provides an output power of 15 W with a power efficiency of 2% and has a slope efficiency of 0.2 W/A. This laser diode has a cavity of length 1250 μm and a spectral width of 28.8 nm. It requires a DC supply of 8.6 V and has a threshold current of 1 A. The laser diode is available in a TO56 package and is ideal for OEM medical, professional medical, LiDAR, military, aerospace, and illumination applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    SemiNex Corporation
  • Description
    1550 nm InP based IR Laser Diode


  • Application
    OEM, LiDAR, Illumination
  • Application Industry
    Medical, Aerospace / Military

General Parameters

  • Chip Technology
  • Operation Mode
    Pulsed Laser
  • Wavelength
    1550 nm
  • Output Power
    15 W
  • Spectral Width (FWHM)
    28.8 nm
  • Operating Voltage
    8.6 V
  • Operating Current
    48 A
  • Emitter Width
    180 µm
  • Threshold Current
    1000 mA
  • Power Conversion Efficiency
  • Beam Divergence Parallel
    14 Degrees
  • Beam Divergence Perpendicular
    30 Degrees
  • Laser Color
  • Emitting Area
    180 x 1 µm (W x H)
  • Series Resistance
    0.2 Ohms
  • Slope Efficiency
    0.2 W/A
  • Package Type
  • Type
    Free Space Laser Diode
  • Tags
    TO56 Mini
  • Note
    Cavity Length : 1.25 mm

Physical Properties

  • Dimension
    5.6 x 4.3 mm (D x L)
  • Weight
    0.31 g


  • Operating Temperature
    -40 to 60 Degree C
  • Storage Temperature
    -40 to 80 Degree C

Technical Documents

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