HL63392DG

Laser Diode by Ushio Opto Semiconductors

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The HL63392DG from Ushio Opto Semiconductors is a AlGaInP Laser Diode that provides an output power of 200 mW while operating at 638 nm. The laser diode is available in a TO-can package and is ideal for laser module, leveller and light source of optical equipments applications.

 Product Specifications

    Product Details

    • Part Number :
      HL63392DG
    • Manufacturer :
      Ushio Opto Semiconductors
    • Description :
      639nm /200mW/Built-in monitor PD AlGaInP Laser Diode

    Applications

    • Application :
      Laser module, Leveller, Measurement, Medical, Light source of optical equipment

    General Parameters

    • Configuration :
      Single Emitter
    • Chip Technology :
      AlGaInP
    • Wavelength :
      633 to 643 nm
    • Output Power :
      120 to 200 mW
    • Output Power :
      120 to 200 mW
    • Operating Voltage :
      2.8 to 3.3 V
    • Operating Current :
      255 to 290 mA
    • Operating Current :
      255 to 290 mA
    • Reverse Voltage(PD) :
      30 V
    • Threshold Current :
      65 to 80 mA
    • Monitor Current :
      0.4 to 1.3 mA
    • Beam Divergence Parallel :
      5 to 13 Degree
    • Beam Divergence Perpendicular :
      5 to 13 Degree
    • Laser Color :
      Red
    • Fiber Modes :
      Single Mode
    • Package Type :
      TO-Can
    • Package :
      5.6 mm
    • Stack/Array :
      Array/Stack
    • Type :
      Free Space Laser Diode

    Physical Properties

    • RoHS :
      Yes

    Temperature

    • Operating Temperature :
      -10 to 60 Degree C
    • Storage Temperature :
      -40 to 85 Degree C

    Technical Documents

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