Laser Diode by Ushio Inc.

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The HL63392DG from Ushio Opto Semiconductors is a AlGaInP Laser Diode that provides an output power of 200 mW while operating at 638 nm. The laser diode is available in a TO-can package and is ideal for laser module, leveller and light source of optical equipments applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Ushio Inc.
  • Description
    639nm /200mW/Built-in monitor PD AlGaInP Laser Diode


  • Application
    Laser module, Leveller, Measurement, Medical, Light source of optical equipment

General Parameters

  • Configuration
    Single Emitter
  • Chip Technology
  • Wavelength
    633 to 643 nm
  • Output Power
    120 to 200 mW
  • Output Power
    120 to 200 mW
  • Operating Voltage
    2.8 to 3.3 V
  • Operating Current
    255 to 290 mA
  • Operating Current
    255 to 290 mA
  • Reverse Voltage(PD)
    30 V
  • Threshold Current
    65 to 80 mA
  • Monitor Current
    0.4 to 1.3 mA
  • Beam Divergence Parallel
    5 to 13 Degree
  • Beam Divergence Perpendicular
    5 to 13 Degree
  • Laser Color
  • Fiber Modes
    Single Mode
  • Package Type
  • Package
    5.6 mm
  • Stack/Array
  • Type
    Free Space Laser Diode

Physical Properties

  • RoHS


  • Operating Temperature
    -10 to 60 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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