Laser Diode by Ushio Inc.

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The HL65241DG from Ushio Opto Semiconductors is an AlGaInP Red Laser Diode that operates from 652 to 665 nm. It provides a CW optical power of 110 mW and pulsed optical power of 220 mW. This single transverse mode laser diode has a reverse voltage of 30 V and a threshold current of 60 mA. It is available in a DG package that measures 5.6 mm and is ideal for the light source of optical equipment, and sensor applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Ushio Inc.
  • Description
    AlGaInP Red Laser Diode from 652 to 665 nm

General Parameters

  • Configuration
    Single Emitter
  • Operation Mode
  • Wavelength
    660 nm
  • Output Power
    110 to 220 W
  • Operating Voltage
    2.45 to 3.0 V
  • Operating Current
    145 to 225 mA
  • Reverse Voltage(PD)
    30 V
  • Threshold Current
    60 to 90 mA
  • Monitor Current
    0.05 to 1.10 mA
  • Beam Divergence Parallel
    4 to 10 Degree
  • Beam Divergence Perpendicular
    11 to 19 Degree
  • Fiber Modes
    Single Mode
  • Package Type
  • Package
    5.6 mm 3-pin CAN
  • Type
    Free Space Laser Diode


  • Operating Temperature
    -10 to 90 Degree C
  • Storage Temperature
    -40 to 100 Degree C

Technical Documents

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