The HL67191MG_192MG from Ushio Opto Semiconductors is a 670 nm AlGaInP Laser Diode. This laser diode provides an optical output power of 16 mW and achieves a pulsed optical output power of 32 mW. It exhibits a pulse width of less than 50 ns and has a duty cycle under 50%. The laser diode requires a DC voltage of 2.70 V and has a threshold current of up to 30 mA. It is available in a small φ 5.6mm CAN package and is ideal for sensing and measurement applications.