HL67191MG_192MG

Laser Diode by Ushio Opto Semiconductors

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The HL67191MG_192MG from Ushio Opto Semiconductors is a 670 nm AlGaInP Laser Diode. This laser diode provides an optical output power of 16 mW and achieves a pulsed optical output power of 32 mW. It exhibits a pulse width of less than 50 ns and has a duty cycle under 50%. The laser diode requires a DC voltage of 2.70 V and has a threshold current of up to 30 mA. It is available in a small φ 5.6mm CAN package and is ideal for sensing and measurement applications.

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Product Details

  • Part Number
    HL67191MG_192MG
  • Manufacturer
    Ushio Opto Semiconductors
  • Description
    670nm, Single-Mode AlGaInP Laser Diode

Applications

  • Application
    Sensing, Measurement

General Parameters

  • Chip Technology
    AlGaInP
  • Operation Mode
    CW / Pulsed Laser
  • Wavelength
    660 to 680 nm
  • Output Power
    15 mW(CW), 30 mW(Pulsed)
  • Spectral Width (FWHM)
    50 ns
  • Operating Voltage
    2.25 to 2.70 V
  • Operating Current
    0.03 to 0.045 A
  • Duty Cycle
    50 %
  • Reverse Voltage(PD)
    20 V
  • Reverse Current(LD)
    2 V
  • Threshold Current
    15 to 30 mA
  • Monitor Current
    0.5 to 2.5 mA
  • Beam Divergence Parallel
    5 to 11 Degrees
  • Beam Divergence Perpendicular
    20 to 28 Degrees
  • Fiber Modes
    Single Mode
  • Package Type
    TO-Can
  • Package
    f5.6mm CAN Package
  • Type
    Free Space Laser Diode

Temperature

  • Operating Temperature
    -10 to 70 Degree C
  • Storage Temperature
    -45 to 85 Degree C

Technical Documents

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