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ROF-PR-200M-B

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The ROF-PR-200M-B from Beijing Rofea Optoelectronics is a Photodetector with Wavelength Range 320 to 1000 nm, Supply Voltage DC to 15 V, Rise Time 1.5 ns, Bandwidth 200 MHz, Active Area Diameter 200 µm. More details for ROF-PR-200M-B can be seen below.

Product Specifications

Product Details

  • Part Number
    ROF-PR-200M-B
  • Manufacturer
    Beijing Rofea Optoelectronics
  • Description
    320 to 1000 nm UV-VIS-NIR Module with Connector Silicon Photodetector

General Parameters

  • Photodetector Material
    Silicon (Si)
  • Operation Mode
    Photovoltaic
  • Package Type
    Module with Connector
  • Spectral Band
    Ultraviolet, Visible, Infrared
  • Wavelength Range
    320 to 1000 nm
  • Photodetector Type
    Avalanche
  • Supply Voltage
    DC to 15 V
  • Rise Time
    1.5 ns
  • Bandwidth
    200 MHz
  • Active Area Diameter
    200 µm
  • Impedance
    50 Ohms
  • Input Power
    -36 dBm
  • Noise equivalent power(NEP)
    20 pw/vHz
  • Package
    Module with Connector
  • Rise Fall Time
    1.5 ns (Rise)
  • Short Circuit Current
    80 mA
  • Responsivity/Photosensitivity
    0.5 A/W
  • Note
    Gain: 0.7 x 104 V/W, RF Connector: SMA - Female, Humidity: 5 to 90%

Environmental Conditions

  • Operating Temperature display
    -10 to 60 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Physical Properties

  • Dimensions
    76 x 72.6 x 44 mm

Applications

  • Application
    Weak Signal Detection, Heterodyne Detection

Connections & Interface

  • Fiber optic connector
    FC/APC
  • RF Connector
    SMA - Female

Technical Documents
Click to view more product details on manufacturer's website
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