FPD310-FC-NIR

Photodetector by Menlo Systems

Note: Your Quotation Request will be directed to Menlo Systems.

The FPD310-FC-NIR from Menlo Systems is an InGaAs PIN Photodetector that has a spectral range of 950 nm - 1650 nm. It has a damage threshold of 2 mW and 3 dB bandwidth of 5 MHz - 1000 MHz. This photodetector has a saturation limit of up to 200 μW and frequency range of 1 MHz - 1500 MHz. It has a rise time of 0.5 ns and maximum gain of 2 x 104. This photodetector has a noise equivalent power (NEP) of 12 pW/sqrt(Hz) and dark state noise level of -100 dBm/sqrt(Hz) (up to 5 MHz) & -130 dBm/sqrt(Hz) (for 5 MHz - 1500 MHz).

The FPD310-FC-NIR has two switchable gain settings: 0 dB & 20 dB attenuation and an integrated low noise radio frequency amplifier. It has an SMF28 fiber-coupled output fiber that supports FC/APC and SMA female connectors. This photodetector requires a DC supply voltage of 12 V and consumes 100 mA of current. It is available in a compact design that measures 60 mm x 50 mm x 20 mm and is ideal for detection of fast laser pulses in the near-infrared or visible range, detection of low light level signals, radio frequency & pulse shape extraction of laser light sources & heterodyne laser beat signal detection applications.

Product Specifications

Product Details

  • Part Number
    FPD310-FC-NIR
  • Manufacturer
    Menlo Systems
  • Description
    950 nm - 1650 nm, InGaAs PIN Photodetector for Pulse Detection Applications

General Parameters

  • Photodetector Material
    Indium Gallium Arsenide (InGaAs)
  • Operation Mode
    Photovoltaic
  • Package Type
    Module with Connector
  • Spectral Band
    Near-IR, Infrared
  • Wavelength Range
    950 to 1650 nm
  • Photodetector Type
    PIN
  • Supply Voltage
    12 V
  • Rise Time
    0.5 ns
  • Bandwidth
    5 to 1000 MHz
  • Cut-Off Frequency
    1 to 1500 MHz
  • Noise equivalent power(NEP)
    12.0 pW/vHz
  • Package
    Module with Connector
  • Rise Fall Time
    0.5 ns (Rise)
  • Supply Current
    100 mA
  • Note
    Damage Threshold: 2 mW, Dark State Noise Level: -100 to -130 dBm, Gain: 2 x 10-4 V/W, Relative Humidity: 10 to 90% (Non-Condensing)

Environmental Conditions

  • Operating Temperature display
    10 to 40 Degree C
  • Storage Temperature
    -20 to 85 Degree C

Physical Properties

  • Dimensions
    60 x 50 x 20 mm2

Applications

  • Application
    Detection of Fast Laser Pulses In The Near Infrared or Visible Range, Detection of Low Light Level Signals, Radio Frequency and Pulse Shape Extraction of Laser Light Sources, Heterodyne Laser Beat Signal Detection

Connections & Interface

  • RF Connector
    SMA - Female

Technical Documents

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