BPW 34 S

Photodiode by ams OSRAM

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The BPW 34 S from ams OSRAM is a Photodiode with Wavelength Range 420 to 1120 nm, Capacitance 72 pF, Dark Current 2 to 30 nA, Responsivity/Photosensitivity 0.62 A/W, Rise Time 0.02 µs. More details for BPW 34 S can be seen below.

Product Specifications

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Product Details

  • Part Number
    BPW 34 S
  • Manufacturer
    ams OSRAM
  • Description
    Silicon PIN photodiode from 420 to 1120 nm

Applications

  • Application
    LIDAR, Pre-Crash, ACC, Rain Sensors

General Parameters

  • Configuration
    Single
  • Fall Time
    0.02 µs
  • Forward Voltage
    1.3 V
  • Module
    No
  • Noise equivalent power(NEP) :
    0.041 pW/Hz1/2
  • Package
    DIL SMT
  • Package Type
    DIL, Surface Mount
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    420 to 1120 nm
  • Photodiode Material
    Silicon
  • Power Dissipation
    150 mW
  • Reverse Voltage
    32 V
  • Short Circuit Current
    80 µA
  • Capacitance
    72 pF
  • Dark Current
    2 to 30 nA
  • Responsivity/Photosensitivity
    0.62 A/W
  • Rise Time
    0.02 µs
  • Note
    Open-circuit voltage: 300 to 365 mV, Half angle: 60 Degree

Physical Properties

  • Active Area
    2.65 x 2.65 mm

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 100 Degree C
  • Temperature Coefficient
    0.18 %/K

Technical Documents

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