PIN1000-17-D/T0/T1/C

Note: Your Quotation Request will be directed to Chunghwa Leading Photonics Tech (CLPT).

The PIN1000-17-D/T0/T1/C from Chunghwa Leading Photonics Tech (CLPT) are InGaAs PIN Photodiodes that have a spectral range from 0.9 μm to 1.7 μm. They have a 3dB bandwidth of 40 MHz and an aperture size of Ø 950 µm. These photodiodes have a responsivity of 0.15 - 0.2 A/W (at 0.85 µm), 0.9 - 0.95 A/W (at 1.3 µm), & 0.95 - 1 A/W (at 1.55 µm) and forward current of up to 10 mA. They have a dark current of 1 nA, shunt resistance of 200 MOhms, and capacitance of 120 pF (at 1 MHz, 0 V) & 60 pF (at 1 MHz, -5 V).

The PIN1000-17-D/T0/T1/C have a saturation power of 7 mW (at 1.55 µm) and Noise equivalent power (NEP) of 1.2 x 10-14 W/√(Hz). These photodiodes have a reverse voltage of up to 20 V, reverse current of up to 10 mA and are available in TO-46 / 3P, TO-46 / 5P or 6CLCC (3.0SQ) packages. They are ideal for power monitoring, spectral analysis, Light Detection and Ranging (LiDAR), remote temperature sensors, humidity detection, ice/slush detection, gas leak detection, single-photodiode SWIR cameras, covert IR sensing, and optical powering applications.

Product Specifications View similar products

Product Details

  • Part Number
    PIN1000-17-D/T0/T1/C
  • Manufacturer
    Chunghwa Leading Photonics Tech (CLPT)
  • Description
    0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications

Applications

  • Application
    Power Monitoring, Spectral Analysis, Light Detection and Ranging (LIDAR), Remote Temperature sensors, Humidity detection, Ice/slush/moisture detection, Gas leak detection, Single-Photodiode SWIR Camera, Convert IR Sensing, Optical Powering

General Parameters

  • Forward Current
    10 mA
  • Noise equivalent power(NEP)
    1.2 x 10-14 W/vHz to 2.4 x 10-14 W/vHz
  • Package
    TO-46/3P, 5P, 6CLCC (3.OSQ)
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    InGaAs
  • Reverse Current
    10 mA
  • Reverse Voltage
    20 V
  • Saturation Power
    5 to 7 mW
  • Shunt Resistance
    50 to 200 MOhms
  • Bandwidth
    30 to 40 MHz
  • Capacitance
    120 to 160 pF
  • Dark Current
    1 to 2 nA
  • Responsivity/Photosensitivity
    0.1 to 1 A/W

Physical Properties

  • Active Area Diameter
    950 µm

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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