PIN1000-22-D/T0/T1

Note: Your Quotation Request will be directed to Chunghwa Leading Photonics Tech (CLPT).

The PIN1000-22-D/T0/T1 from Chunghwa Leading Photonics Tech (CLPT) are InGaAs PIN photodiodes that have a spectral range from 0.9 µm - 2.2 µm. They have a 3 dB bandwidth of 10 MHz and an aperture size of Ø 950 µm. These photodiodes have a responsivity of  0.95 - 1 A/W (at 1.55 µm) & 1.05 - 1.1 A/W (at 1.9 µm) and forward current of up to 10 mA. They have a dark current of 2.5 µA, shunt resistance of 40 KOhms, and capacitance of 450 pF (at 1 MHz, 0 V) & 300 pF (at 1 MHz, -5 V).

The PIN1000-22-D/T0/T1 have a saturation power of 2 mW (at 1.55 µm) and noise equivalent power (NEP) of 3 x 10-12 W/√Hz (at 1.9 µm, 1 KHz). These photodiodes have a maximum reverse voltage of 1.5 V, reverse current of 10 mA and are available in TO-46/3P,5P packages. They are ideal for power monitoring, spectral analysis, Light Detection and Ranging (LiDAR), remote temperature sensors, ice/slush/moisture detection, gas leak detection, single-photodiode SWIR camera, and covert IR sensing applications.

Product Specifications View similar products

Product Details

  • Part Number
    PIN1000-22-D/T0/T1
  • Manufacturer
    Chunghwa Leading Photonics Tech (CLPT)
  • Description
    0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications

Applications

  • Application
    Power Monitoring, Spectral Analysis, Light Detection and Ranging (LIDAR), Remote Temperature sensors, Ice/slush/moisture detection, Gas leak detection, Single-Photodiode SWIR Camera, Convert IR Sensing

General Parameters

  • Forward Current
    10 mA
  • Noise equivalent power(NEP)
    3 x 10-12 W/vHz to 5 x 10-12 W/vHz
  • Package
    TO-46/3P, 5P
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 2.2 µm
  • Photodiode Material
    InGaAs
  • Reverse Current
    10 mA
  • Reverse Voltage
    1.5 V
  • Saturation Power
    1 to 2 mW
  • Shunt Resistance
    20 to 40 KOhms
  • Bandwidth
    6 to 10 MHz
  • Capacitance
    300 to 600 pF
  • Dark Current
    2.5 to 5 nA
  • Responsivity/Photosensitivity
    0.9 to 1.1 A/W

Physical Properties

  • Active Area Diameter
    950 µm

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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