Photodiode by Dexerials Corporation

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The KPD101M32 from Dexerials Corporation is a Silicon (Si) Photodiode that operates at a wavelength of 850 nm. It has an active area of 0.81 mm x 0.81 mm and a half angle of 90 degrees. This photodiode has an open circuit voltage of 400 mV and a short circuit current of 16 μA. It has a dark current of up to 10 nA and terminal capacitance of 14 pF. This photodiode has a reverse voltage of 10 V, Forward current of 10 mA, and reverse current of 1 mA. It is available in a transparent epoxy MOLD package that measures 29.1 mm x 3.8 mm and is ideal for optical switches, optical encoders, pulse detectors, sensors, and industrial control applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Dexerials Corporation
  • Description
    850 nm Silicon Photodiode for Pulse Detector Applications


  • Application
    Optical switches, Optical encoders, Pulse detectors, Sensors and industrial controls

General Parameters

  • Forward Current
    10 mA
  • Module
  • Package
  • Package Type
    DIP / DIL / Thru-Hole
  • Operation Mode
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Current
    1 mA
  • Reverse Voltage
    10 V
  • Short Circuit Current
    16 µA
  • Spectral Band
  • Capacitance
    14 pF (Terminal)
  • Dark Current
    10 nA
  • Note
    Open circuit voltage: 400 mV, Half angle: 90 Degree

Physical Properties

  • Active Area
    0.81 x 0.81 mm2


  • Operating Temperature display
    -20 to 80 Degree C
  • Storage Temperature
    -20 to 100 Degree C

Technical Documents

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