The C30645L-080 from Excelitas Technologies is an InGaAs Avalanche Photodiode that operates from 1000 to 1700 nm. It has a breakdown voltage from 45 to 70 V and provides a responsivity of 9.4 A/W. The avalanche diode has a quantum efficiency of 75% and a rise/fall time of 0.3 ns. It has a forward current of 5 mA, a reverse current of 0.4 mA, and power dissipation of 20 mW.
The C30645L-080 provides high responsivity and quantum efficiency at low dark current and noise. This photodiode is available in a ceramic SMT package that measures 3.00 x 2.70 x 1.35 mm and is ideal for LiDAR/ToF measurements, eye-safe laser range finding, optical time-domain reflectometers, optical communication systems, laser scanning, and high volume consumer applications.