C30645L-080

Photodiode by Excelitas Technologies

Note: Your Quotation Request will be directed to Excelitas Technologies.

The C30645L-080 from Excelitas Technologies is an InGaAs Avalanche Photodiode that operates from 1000 to 1700 nm. It has a breakdown voltage from 45 to 70 V and provides a responsivity of 9.4 A/W. The avalanche diode has a quantum efficiency of 75% and a rise/fall time of 0.3 ns. It has a forward current of 5 mA, a reverse current of 0.4 mA, and power dissipation of 20 mW.

The C30645L-080 provides high responsivity and quantum efficiency at low dark current and noise. This photodiode is available in a ceramic SMT package that measures 3.00 x 2.70 x 1.35 mm and is ideal for LiDAR/ToF measurements, eye-safe laser range finding, optical time-domain reflectometers, optical communication systems, laser scanning, and high volume consumer applications.

Product Specifications View similar products

Product Details

  • Part Number
    C30645L-080
  • Manufacturer
    Excelitas Technologies
  • Description
    InGaAs Avalanche Photodiode from 1000 to 1700 nm

Applications

  • Application
    LiDAR / ToF Measurements, Eye-safe Laser Range Finding, High Volume Consumer Applications, Optical Time-domain Reflectometer (OTDR), Optical Communication Systems, Laser Scanning

General Parameters

  • Breakdown Voltage
    45 to 70 V
  • Channels
    Single
  • Configuration
    Single
  • Fall Time
    0.3 ns
  • Forward Current
    5 mA
  • Module
    No
  • Noise equivalent power(NEP)
    0.04 pW/vHz
  • Package
    Ceramic SMT Package
  • Package Type
    Surface Mount
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    1000 to 1700 nm
  • Photodiode Material
    InGaAs
  • Power Dissipation
    20 mW
  • Quantum Efficiency
    0.75
  • Reverse Current
    0.4 mA
  • Rise/Fall Time
    0.3 ns
  • RoHs
    Yes
  • Spectral Band
    Infrared
  • Bandwidth
    1000 MHz
  • Capacitance
    1.45 pF
  • Dark Current
    5 to 60 nA
  • Responsivity/Photosensitivity
    9.4 A/W
  • Rise Time
    0.3 ns
  • Note
    Operating Point from Breakdown: 2.5 V, Dark Noise Current: 0.35 to 1.00 pA/vHz, Soldering temp.: 250 Degree C

Physical Properties

  • Active Area
    5027 µm2
  • Active Area Diameter
    80 µm

Temperature

  • Operating Temperature display
    -20 to 70 Degree C
  • Storage Temperature
    -60 to 125 Degree C
  • Temperature Coefficient
    0.14 to 0.20 V/Degree C

Technical Documents

Click to view more product details on manufacturer's website