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VTB8341H

Photodiode by Excelitas Technologies
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The VTB8341H from Excelitas Technologies is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 1 nF, Dark Current 100 pA, Responsivity/Photosensitivity 0.10 A/W. More details for VTB8341H can be seen below.

Product Specifications

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Product Details

  • Part Number
    VTB8341H
  • Manufacturer
    Excelitas Technologies
  • Description
    Silicon photodiode from 320 to 1100 nm

Applications

  • Application
    UV and blue light sensing, Light meters, Flame monitoring, Photometry

General Parameters

  • Breakdown Voltage
    2 to 40 V
  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    2.4 x 10-14 W/vHz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1100 nm
  • Photodiode Material
    Silicon
  • RoHs
    Yes
  • Short Circuit Current
    35 to 60 µA
  • Shunt Resistance
    1.4 GOhms
  • Capacitance
    1 nF
  • Dark Current
    100 pA
  • Responsivity/Photosensitivity
    0.10 A/W
  • Note
    ISC Temperature Coefficient: 0.12 to 0.23%/Degree C, Open Circuit Voltage: 490 mV, RSH Temperature Coefficient: -8%/Degree C

Physical Properties

  • Active Area
    5.16 mm

Temperature

  • Operating Temperature display
    -20 to 75 Degree C
  • Storage Temperature
    -20 to 75 Degree C
  • Temperature Coefficient
    -2.0 mV/Degree C

Technical Documents
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