Photodiode by Go!Foton

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The PDPF1000CC from Go!Foton is an InGaAs-based PIN Photodiode that operates from 950 to 1625 nm. It can handle an input power of up to 10 mW and offers a responsivity of more than 0.95 A/W. The photodiode has a shunt resistance of 50 megaohms and a capacitance of 100 pF. It has a reverse voltage of up to 20 V and a reverse current of up to 10 mA. The photodiode is mounted on a ceramic subcarrier and has a planar structure. It is fabricated at Go!Foton’s proprietary wafer fab, and is suitable for optical power meters, infrared rangefinders, and spectroscopy applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    InGaAs-based PIN Photodiode from 950 to 1625 nm

General Parameters

  • Channels
  • Configuration
  • Forward Current
    10 mA
  • Input Power
    10 mW
  • Package Type
    Chip, Surface Mount
  • Photodetector Type
  • Wavelength Range
    950 to 1625 nm
  • Photodiode Material
  • Reverse Current
    10 mA
  • Reverse Voltage
    20 V
  • RoHs
  • Shunt Resistance
    50 MOhms
  • Capacitance
    100 to 150 pF
  • Dark Current
    50 nA
  • Responsivity/Photosensitivity
    0.95 to 1.0 A/W

Physical Properties

  • Active Area Diameter
    1000 µm


  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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