GAP1000

Photodiode by GPD Optoelectronics

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The GAP1000 from GPD Optoelectronics is a Photodiode with Wavelength Range 850 to 1550 nm, Bandwidth 100 MHz, Capacitance 30 to 120 pF, Dark Current 25 to 100 nA, Responsivity/Photosensitivity 0.10 to 0.95 A/W. More details for GAP1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAP1000
  • Manufacturer
    GPD Optoelectronics

Applications

  • Application
    NIR Sensing/Radiometry, LED/LD Characterization, Medical Diagnostics, Spectroscopy, Raman Spectroscopy, Spectroscopy, Astronomy/Photometry, Military, CommercialNIR Sensing/Radiometry, LED/LD Characterization, Medical Diagnostics, Spectroscopy, Raman Spect

General Parameters

  • Configuration
    Single
  • Channels
    Single
  • Forward Current
    10 mA
  • Impedance
    50 Ohms
  • Module
    No
  • Noise equivalent power(NEP) :
    0.03 pW/vHz
  • Package
    TO-46
  • Package Type
    TO-Can
  • Operation Mode
    Photoconductive
  • Wavelength Range
    850 to 1550 nm
  • Photodiode Material
    InGaAs
  • Power Dissipation
    100 mW
  • Reverse Current
    10 mA
  • Reverse Voltage
    20 V
  • Shunt Resistance
    20 to 50 MOhm
  • Bandwidth
    100 MHz
  • Capacitance
    30 to 120 pF
  • Dark Current
    25 to 100 nA
  • Responsivity/Photosensitivity
    0.10 to 0.95 A/W

Physical Properties

  • Active Area
    1 x 1 mm2

Temperature

  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents

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