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G8195-12

Photodiode by Hamamatsu Photonics
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The G8195-12 from Hamamatsu Photonics is a Photodiode with Wavelength Range 0.9 to 1.7 µm, Capacitance 1 to 1.5 pF, Dark Current 0.2 to 0.4 nA, Responsivity/Photosensitivity 0.75 to 0.95 A/W. More details for G8195-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    G8195-12
  • Manufacturer
    Hamamatsu Photonics
  • Description
    InGaAs PIN photodiode from 0.9 to 1.7 µm

Applications

  • Application
    Power monitor in optical fiber communications

Connections & Interface

  • Optical Connector
    FC/SPC

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    2 GHz
  • Module
    No
  • Noise equivalent power(NEP) :
    3 x 10-15 W/Hz
  • Package
    Pigtail, Coaxial
  • Package Type
    TO-Can Pigtail, Coaxial
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    0.9 to 1.7 µm
  • Photodiode Material
    Indium Gallium Arsenide (InGaAs)
  • Reverse Voltage
    20 V
  • Spectral Band
    NIR
  • Capacitance
    1 to 1.5 pF
  • Dark Current
    0.2 to 0.4 nA
  • Responsivity/Photosensitivity
    0.75 to 0.95 A/W

Temperature

  • Operating Temperature display
    -20 to 70 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents
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