Photodiode by Hamamatsu Photonics

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The P13894-011CN from Hamamatsu Photonics is an InAsSb Infrared Photodiode that has a spectral range of up to 11 μm. It has a photosensitive area of 1 x 1 mm with photosensitivity of 2 mA/W and detectivity of 7.0 × 107 cm·Hz1/2/W. This photodiode has a maximum rise time of 10 ns and a maximum noise equivalent power of 2.5 x 10-9 W/Hz1/2. It has a shunt resistance of 2 kΩ and a terminal capacitance of 0.6 pF. This photodiode is available in a compact surface mount ceramic package and is ideal for radiation thermometers and gas detection (CH4, CO2, CO, NH3, O3, etc.) applications.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
    Hamamatsu Photonics
  • Description
    11 µm InAsSb Infrared Photodiode


  • Application
    Gas Detection (CH4, CO2, CO, NH3, O3, etc.), Radiation Thermometers

General Parameters

  • Cut-Off Wavelength
    9.7 to 11 µm
  • Detectivity
    (4 to 7) x 107 cm x Hz1/2/W
  • Noise equivalent power(NEP)
    (1.4 to 2.5) x 10-9 W/Hz1/2/W
  • Package
    Ceramic Package
  • Package Type
    Ceramic, Surface Mount
  • Operation Mode
  • Wavelength Range
    9.7 to 11 µm
  • Photodiode Material
  • Reverse Voltage
    1 V
  • RoHs
  • Shunt Resistance
    1.5 to 2 kOhms
  • Spectral Band
  • Capacitance
    0.6 pF
  • Responsivity/Photosensitivity
    1.4 to 2 mA/W
  • Rise Time
    3 to 10 ns
  • Note
    Chip temperature: 25 Degree C, Peak sensitivity wavelength: 5.6 µm, Field of view: 82 Degrees

Physical Properties

  • No. of Elements
  • Active Area
    1 x 1 mm


  • Operating Temperature display
    -40 to 85 Degree C
  • Storage Temperature
    -40 to 85 Degree C

Technical Documents

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