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S1226-44BQ

Photodiode by Hamamatsu Photonics
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The S1226-44BQ from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1000 nm, Capacitance 500 pF, Dark Current 10 pA, Responsivity/Photosensitivity 0.1 to 0.12 A/W, Rise Time 1 µs. More details for S1226-44BQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    S1226-44BQ
  • Manufacturer
    Hamamatsu Photonics
  • Description
    TO-Can Silicon photodiode from 190 to 1000 nm

Applications

  • Application
    Analytical Equipment, Optical Measurement Equipments

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    3.6 x 10-15 W/Hz
  • Package
    TO-5
  • Package Type
    TO-Can
  • Operation Mode
    Photoconductive
  • Wavelength Range
    190 to 1000 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    5 V
  • Short Circuit Current
    4.4 to 5.9 µA
  • Shunt Resistance
    1 to 10 GOhms
  • Spectral Band
    UV-VIS
  • Capacitance
    500 pF
  • Dark Current
    10 pA
  • Responsivity/Photosensitivity
    0.1 to 0.12 A/W
  • Rise Time
    1 µs

Physical Properties

  • Active Area
    3.6 x 3.6 mm
  • Window Material
    quartz glass

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -55 to 80 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents
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