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S1227-66BQ

Photodiode by Hamamatsu Photonics
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The S1227-66BQ from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1000 nm, Capacitance 950 pF, Dark Current 20 pA, Responsivity/Photosensitivity 0.1 to 0.12 A/W, Rise Time 2 µs. More details for S1227-66BQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    S1227-66BQ
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 190 to 1000 nm

Applications

  • Application
    Analytical Equipment, Optical Measurement Equipments

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    5 x 10-15 W/Hz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    190 to 1000 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    5 V
  • Short Circuit Current
    11 to 16 µA
  • Shunt Resistance
    0.5 to 5 GOhms
  • Spectral Band
    UV-VIS
  • Capacitance
    950 pF
  • Dark Current
    20 pA
  • Responsivity/Photosensitivity
    0.1 to 0.12 A/W
  • Rise Time
    2 µs

Physical Properties

  • Active Area
    5.8 x 5.8 mm
  • Window Material
    Quatz

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents
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