S12363-021

Photodiode by Hamamatsu Photonics

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The S12363-021 from Hamamatsu Photonics is a Photodiode with Wavelength Range 340 to 1100 nm, Capacitance 50 to 100 pF, Dark Current 5 to 50 pA, Responsivity/Photosensitivity 380 to 670 mA/W, Rise Time 6.5 µs. More details for S12363-021 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S12363-021
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 340 to 1100 nm

Applications

  • Application
    X-ray non-destructive inspection

General Parameters

  • Configuration
    Array
  • Module
    No
  • Package
    Glass epoxy
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    340 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    6 to 7 µA
  • Capacitance
    50 to 100 pF
  • Dark Current
    5 to 50 pA
  • Responsivity/Photosensitivity
    380 to 670 mA/W
  • Rise Time
    6.5 µs

Physical Properties

  • Active Area
    2.2 x 2.7 mm
  • Window Material
    Glass epoxy

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C

Technical Documents

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