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S12859-122

Photodiode by Hamamatsu Photonics
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The S12859-122 from Hamamatsu Photonics is a Photodiode with Wavelength Range 340 to 1100 nm, Capacitance 20 to 40 pF, Dark Current 3 to 30 pA, Responsivity/Photosensitivity 380 to 670 mA/W, Rise Time 6.5 µs. More details for S12859-122 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S12859-122
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 340 to 1100 nm

Applications

  • Application
    X-ray non-destructive inspection

General Parameters

  • Configuration
    Array
  • Module
    No
  • Package
    Glass epoxy
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    340 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    2.1 to 3.2 µA
  • Capacitance
    20 to 40 pF
  • Dark Current
    3 to 30 pA
  • Responsivity/Photosensitivity
    380 to 670 mA/W
  • Rise Time
    6.5 µs

Physical Properties

  • Active Area
    0.77 x 2.5 mm
  • Window Material
    Glass epoxy

Temperature

  • Operating Temperature display
    -10 to 60 Degree C
  • Storage Temperature
    -20 to 70 Degree C

Technical Documents
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