S1337-21

Photodiode by Hamamatsu Photonics

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The S1337-21 from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1100 nm, Capacitance 4000 pF, Dark Current 500 pA, Responsivity/Photosensitivity 0.1 to 0.52 A/W, Rise Time 8 µs. More details for S1337-21 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S1337-21
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 190 to 1100 nm

Applications

  • Application
    Analytical Equipment, Optical Measurement Equipments

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    2.5 x 10-14 W/Hz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    190 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    5 V
  • Short Circuit Current
    200 to 250 µA
  • Shunt Resistance
    0.02 to 0.1 GOhms
  • Spectral Band
    UV-VIS-NIR
  • Capacitance
    4000 pF
  • Dark Current
    500 pA
  • Responsivity/Photosensitivity
    0.1 to 0.52 A/W
  • Rise Time
    8 µs

Physical Properties

  • Active Area
    18 x 18 mm
  • Window Material
    Unsealed

Temperature

  • Operating Temperature display
    0 to 60 Degree C
  • Storage Temperature
    0 to 80 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents

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