S15289-33

Photodiode by Hamamatsu Photonics

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The S15289-33 from Hamamatsu Photonics is a Photodiode with Wavelength Range 190 to 1100 nm, Capacitance 70 to 100 pF, Dark Current 10 to 300 pA, Responsivity/Photosensitivity 0.1 to 0.54 A/W, Rise Time 30 µs. More details for S15289-33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S15289-33
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Silicon photodiode from 190 to 1100 nm

Applications

  • Application
    Light level monitor for UV light source, Analytical instruments, Optical measurement equipment

General Parameters

  • Module
    No
  • Noise equivalent power(NEP) :
    7.6 x 10-15 W/Hz
  • Package
    lead-free CSP Package
  • Package Type
    Chip, Surface Mount
  • Operation Mode
    Photoconductive
  • Wavelength Range
    190 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    3 to 4.4 µA
  • Shunt Resistance
    0.033 to 1 GOhms
  • Spectral Band
    UV
  • Capacitance
    70 to 100 pF
  • Dark Current
    10 to 300 pA
  • Responsivity/Photosensitivity
    0.1 to 0.54 A/W
  • Rise Time
    30 µs

Physical Properties

  • Active Area
    2.5 x 2.5 mm

Temperature

  • Operating Temperature display
    -20 to 80 Degree C
  • Storage Temperature
    -20 to 80 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents

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