S1787-12

Photodiode by Hamamatsu Photonics

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The S1787-12 from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 200 pF, Dark Current 20 pA, Responsivity/Photosensitivity 0.3 to 0.35 A/W, Rise Time 0.5 µs. More details for S1787-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S1787-12
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 320 to 1100 nm

Applications

  • Application
    Exposure meter, Illuminometer, Camera auto exposure, Stroboscope light control, Copier, Display light control, Optical switch

General Parameters

  • Module
    No
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    10 V
  • Short Circuit Current
    2.3 µA
  • Shunt Resistance
    1 to 10 GOhms
  • Spectral Band
    VIS-NIR
  • Capacitance
    200 pF
  • Dark Current
    20 pA
  • Responsivity/Photosensitivity
    0.3 to 0.35 A/W
  • Rise Time
    0.5 µs

Physical Properties

  • Active Area
    2.4 x 2.8 mm
  • Window Material
    infrared-cutting filter

Temperature

  • Operating Temperature display
    -10 to 60 Degree C
  • Storage Temperature
    -20 to 70 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents

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