S2387-66R

Photodiode by Hamamatsu Photonics

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The S2387-66R from Hamamatsu Photonics is a Photodiode with Wavelength Range 340 to 1100 nm, Capacitance 4300 pF, Dark Current 50 pA, Responsivity/Photosensitivity 0.33 to 0.58 A/W, Rise Time 10 µs. More details for S2387-66R can be seen below.

Product Specifications

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Product Details

  • Part Number
    S2387-66R
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Ceramic Silicon photodiode from 340 to 1100 nm

Applications

  • Application
    Analytical Equipment, Optical Measurement Equipments

General Parameters

  • Configuration
    Single
  • Module
    No
  • Noise equivalent power(NEP) :
    2.2 x 10-15 W/Hz
  • Package
    Ceramic
  • Package Type
    Ceramic
  • Operation Mode
    Photoconductive
  • Wavelength Range
    340 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    30 V
  • Short Circuit Current
    24 to 31 µA
  • Shunt Resistance
    0.2 to 10 GOhms
  • Spectral Band
    VIS, IR
  • Capacitance
    4300 pF
  • Dark Current
    50 pA
  • Responsivity/Photosensitivity
    0.33 to 0.58 A/W
  • Rise Time
    10 µs

Physical Properties

  • Active Area
    5.8 x 5.8 mm
  • Window Material
    Resin potting

Temperature

  • Operating Temperature display
    -20 to 60 Degree C
  • Storage Temperature
    -20 to 80 Degree C
  • Temperature Coefficient
    1.12 times/Degree C

Technical Documents

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