S5821-03

Photodiode by Hamamatsu Photonics

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The S5821-03 from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 3 pF, Dark Current 0.05 to 2 nA, Responsivity/Photosensitivity 0.45 to 0.6 A/W, Active Area Diameter 1.2 mm. More details for S5821-03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S5821-03
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Silicon PIN photodiode from 320 to 1100 nm

Applications

  • Application
    Optical switches, Automobile optical sensors, General photometry

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    25 MHz
  • Module
    No
  • Noise equivalent power(NEP) :
    6.7 x 10-15 W/Hz
  • Package
    TO-18
  • Package Type
    TO-Can
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Power Dissipation
    50 mW
  • Reverse Voltage
    20 V
  • Short Circuit Current
    12 µA
  • Capacitance
    3 pF
  • Dark Current
    0.05 to 2 nA
  • Responsivity/Photosensitivity
    0.45 to 0.6 A/W

Physical Properties

  • Active Area
    1.1 mm
  • Window Material
    lens type borosilicate glass
  • Active Area Diameter
    1.2 mm

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents

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