S5980-10

Photodiode by Hamamatsu Photonics

Note: Your Quotation Request will be directed to Hamamatsu Photonics.

The S5980-10 from Hamamatsu Photonics is a Photodiode with Wavelength Range 320 to 1100 nm, Capacitance 10 pF, Dark Current 0.3 to 2 nA, Responsivity/Photosensitivity 0.72 A/W. More details for S5980-10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    S5980-10
  • Manufacturer
    Hamamatsu Photonics
  • Description
    Silicon PIN photodiode from 320 to 1100 nm

Applications

  • Application
    Laser optical axis alignment, Level meter, Pointing device

General Parameters

  • Configuration
    Single
  • Cut-Off Frequency
    25 MHz
  • Module
    No
  • Noise equivalent power(NEP) :
    1.4 x 10-14 W/Hz
  • Package
    Surface Mount, Chip, Ceramic
  • Package Type
    Surface Mount, Chip, Ceramic
  • Photodetector Type
    PIN
  • Operation Mode
    Photoconductive
  • Wavelength Range
    320 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Reverse Voltage
    30 V
  • Capacitance
    10 pF
  • Dark Current
    0.3 to 2 nA
  • Responsivity/Photosensitivity
    0.72 A/W

Physical Properties

  • Active Area
    5 x 5 mm
  • Window Material
    Resin coating

Temperature

  • Operating Temperature display
    -40 to 100 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • Temperature Coefficient
    1.15 times/Degree C

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.