S8890-30

Photodiode by Hamamatsu Photonics

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The S8890-30 from Hamamatsu Photonics is a Photodiode with Wavelength Range 400 to 1100 nm, Capacitance 8 pF, Dark Current 15 to 150 nA, Active Area Diameter 3 mm (Photosensitive). More details for S8890-30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    S8890-30
  • Manufacturer
    Hamamatsu Photonics
  • Description
    400 to 1100 nm Visible TO-8 Silicon Photoconductive Photodiode

Applications

  • Application
    YAG laser detection, Long wavelength light detection

General Parameters

  • Breakdown Voltage
    500 to 800 V
  • Configuration
    Single
  • Channels
    Single
  • Cut-Off Frequency
    220 MHz
  • Package
    TO-8
  • Package Type
    TO-Can
  • Photodetector Type
    Avalanche
  • Operation Mode
    Photoconductive
  • Wavelength Range
    400 to 1100 nm
  • Photodiode Material
    Silicon (Si)
  • Spectral Band
    Visible
  • Capacitance
    8 pF
  • Dark Current
    15 to 150 nA

Physical Properties

  • Active Area
    7 mm2
  • Window Material
    Borosilicate glass
  • Active Area Diameter
    3 mm (Photosensitive)

Temperature

  • Operating Temperature display
    -20 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Temperature Coefficient
    3.5 V/Degree C

Technical Documents

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