SUR500X

Photodiode by Laser Components

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The SUR500X from Laser Components is an Avalanche Photodiode (APD) that provides unmatched noise and sensitivity performance over the commercially available wavelength from 260 nm to 1000 nm. It is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range. The diameter of the active area is 0.5 mm. This APD has a breakdown voltage of 200 V at a dark current of 10 μA. The SUR500X is available in a special, hermetical sealed TO-46 package optimized for the UV wavelength range. It is an ideal solution for fluorescent measurements, analytical equipment, medical, scintillation, and high-speed photometry applications.

 Product Specifications

    Product Details

    • Part Number :
      SUR500X
    • Manufacturer :
      Laser Components
    • Description :
      DUV / UV Enhanced Silicon Avalanche Photodiode

    Applications

    • Application :
      Fluorescence Measurements, Analytical equipment, Medical, Scintillation, High Speed photometry

    General Parameters

    • Breakdown Voltage :
      100 to 300 V
    • Channels :
      Single
    • Configuration :
      Single
    • Cut-Off Frequency :
      150 MHz
    • Forward Current :
      5 to 50 mA
    • Noise equivalent power(NEP) :
      22 to 16 fW/sqrt(Hz)
    • Package :
      TO-46, TO-37, TO-8
    • Package Type :
      Through-Hole, TO-Can
    • Photodetector Type :
      Avalanche
    • Operation Mode :
      Photoconductive
    • Wavelength Range :
      260 to 1000 nm
    • Photodiode Material :
      Silicon
    • Power Dissipation :
      60 mW
    • Reverse Current :
      200 uA to 1 mA
    • Rise/Fall Time :
      2 nsec
    • Spectral Band :
      DUV / UV Band
    • Capacitance :
      1.4 pF
    • Dark Current :
      200 pA
    • Responsivity/Photosensitivity :
      21 to 44 A/W
    • Rise Time :
      2 nsec

    Physical Properties

    • Active Area Diameter :
      0.5 mm

    Temperature

    • Operating Temperature display :
      -40 to 85 Degree C
    • Storage Temperature :
      -55 to 100 Degree C
    • Temperature Coefficient :
      0.9 V/K

    Technical Documents

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