Photodiode by Leonardo

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The Saphira from Leonardo is a HgCdTe Avalanche Photodiode Array that operates from 0.8 to 2.5 &mum. It provides an output voltage of 1-2 V and has a charge capacity of 2x105 electrons. The photodiode array supports snapshot/rolling mode. It has an avalanche gain of up to 80 dB and consumes 30 mW of power. The photodiode has pixel operability of above 99% and a high photon sensitivity of up to 1 photon rms. It can perform multiple non-destructive readouts which can allow Fowler sampling or “down the slope” sampling to significantly reduce the noise and increase the sensitivity.

The photodiode array is available in a 68-Pin LCC package having an array size of 320 x 256 pixels with a pixel pitch of 24 μm. It is suitable for applications such as spectroscopy, wave-front sensors, fringe trackers, and imaging in any photon-starved scenario.

Product Specifications View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    HgCdTe Avalanche Photodiode Array from 0.8 to 2.5 µm


  • Application
    Wavefront Sensors, Fringe Trackers, Spectroscopy, Imaging

General Parameters

  • Channels
  • Configuration
  • Module
  • Output Voltage
    1 to 2 V
  • Package
    68 pin LCC
  • Package Type
    Chip, Surface Mount
  • Photodetector Type
  • Wavelength Range
    0.8 to 2.5 µm
  • Photodiode Material
    Mercury Cadmium Telluride (HgCdTe)
  • Power Consumption
    30 mW
  • Spectral Band
    Visible to Infrared
  • Note
    Frame Rate: up to 100K fps, Gain range: Up to 80, Charge Capacity: 2 x 10^5 electrons, Number of Outputs: 4, 8, 16 or 32,Array: 320 x 256 pixels, Pixel Pitch: 24µm

Physical Properties

  • Active Area
    7.68 x 6.14 µm


  • Operating Temperature display
    30 K to 150 K

Technical Documents

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