PA006700

Photodiode by Oclaro Inc.

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The PA006700 from Oclaro is an Indium Phosphide (InP) based Avalanche Photodiode (APD) chip designed for high-performance telecoms receiver applications up to 11.3Gb/s. The optical signal is received via top illumination of the central active region through a ring-shaped contact which provides a 30µm aperture.

A reverse electrical bias is applied across the active region by the P (anode) and N (cathode) contacts. The circular P bond pad has a diameter of 70µm suitable for wire bonding. The APD is suitable for operation at up to 11.3Gb/s at a multiplication gain factor between M3 and M10. The chip is ideal for long-haul networks, 10G PON, single mode datacom, and telecom applications.

 Product Specifications

    Product Details

    • Part Number :
      PA006700
    • Manufacturer :
      Oclaro Inc.
    • Description :
      10Gb/s Avalanche Photodiode (APD) Chip

    Applications

    • Application :
      Long-haul Networks, Single Mode Datacom and Telecom, 10G PON

    General Parameters

    • Breakdown Voltage :
      -32 to -26 V
    • Forward Current :
      3 mA
    • Forward Voltage :
      1 V
    • Input Power :
      4 dBm
    • Module :
      No
    • Package Type :
      Chip
    • Photodetector Type :
      Avalanche
    • Operation Mode :
      Photovoltaic
    • Photodiode Material :
      lnP
    • Power Dissipation :
      160 mW
    • Reverse Current :
      6 mA
    • RoHs :
      Yes
    • Spectral Band :
      Infrared
    • Bandwidth :
      6.5 to 8.5 GHz
    • Capacitance :
      0.22 to 0.25 pF
    • Dark Current :
      25 nA
    • Responsivity/Photosensitivity :
      1 A/W
    • Wavelength Range :
      1550 nm

    Physical Properties

    • Dimensions :
      400 x 400 x 80 um

    Temperature

    • Operating Temperature display :
      -5 to 85 Degree C
    • Storage Temperature :
      -50 to 100 Degree C

    Technical Documents

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