The LAPD 3050 from OSI Laser Diode is an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications. The new 50 µm active area device features low dark current, low back reflection and high speed (2.5 GHz) in a miniature package. With spectral response from 1000 nm to 1650 nm at 25 degrees C, the typical wavelength is 1550 nm.
The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers and long haul applications. The breakdown voltage is from 50 V (min.) to 70 (max.) and operating and storage temperatures range from -40 degrees to 85 degrees C.